EDN

200-V MOSFETs cut conduction losses

Two devices have joined iDEAL Semiconductor’s SuperQ 200-V MOSFET portfolio, offering very low RDS(on) in standard power packages.
Compound Semiconductor

Japanese start-up demos diamond MOSFET breakthroughs

Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the world for a diamond-based device, achieved a breakdown voltage of 550 V ...

Navitas Semiconductor stock surges 20% on new SiC product launch

Navitas Semiconductor (NASDAQ:NVTS) shares jumped 20% following the company’s announcement of two new silicon carbide MOSFET packages designed for AI data cente ...

Global Power Electronics Market Report 2026-2036, Profiles of 90+ Industry Leaders Across GaN, SiC, Automotive OEMs and Semiconductor Supply Chains

The global power electronics market is set for transformative growth, driven by the electrification of vehicles and renewable energy integration. Key trends include a shift to wide bandgap ...
The Malaysian Reserve

SK keyfoundry Successfully Develops 450V-2300V SiC Planar MOSFET Process Platform, Secures New 1200 V Order, Marking the Beginning of Its Full-Scale SiC Bu…

Successfully develops SiC Planar MOSFET process platform for 450V–2300V, securing high reliability and yield ...
Semiconductor Engineering

The Specialty Device Surge, Part 1: Wafer Size Transitions Are Powering The Future Of Specialty Devices And Bringing New Challenges

Specialty devices are the unsung heroes of modern life. For many in the semiconductor industry today, the spotlight is on the SiC and GaN power devices used in automotive, green energy, fast-charge ...

Industry-Lowest RDS(on) 200V MOSFETs in Multiple Standard Power Packages Available from iDEAL Semiconductor

LEHIGH VALLEY, PA, UNITED STATES, March 10, 2026 /EINPresswire.com/ — iDEAL Semiconductor announces the expansion of its SuperQ™ 200V MOSFET portfolio, delivering industry-leading on-resistance across ...
Compound Semiconductor

Wolfspeed introduces first 10kV SiC Power MOSFET

Wolfspeed has announced the industry's first commercially available 10 kV SiC power MOSFET, describing it as setting a new ...

EPC Highlights Gen 7 GaN for AI Infrastructure and GaN Integrated Circuits for Robotics at APEC 2026

Enabling scalable power for AI computing and next-generation robotics Our new GaN integrated circuits enable more ...
IEEE

Evolutionary Analysis of Crosstalk in Silicon Carbide MOSFETs for Gate Switching Applications

Abstract: In power applications of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), crosstalk poses a significant challenge that undermines reliability within bridge ...
IEEE

Single-Gate Driving and Nonisolated Power Supply Technology for Series SiC-MOSFETs in High-Voltage Applications

Abstract: Series-connection of silicon carbide (SiC)-MOSFETs has significant advantages in simplifying the topology and control of high-voltage converters. However, the challenges of high isolation ...
Scientific Research Publishing

Barkhordarian, V. (1997) Power MOSFET Basics. International Rectifier, Application Note AN-1084.

ABSTRACT: We present the complete methodology to propose an efficient electrothermal model of the Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET), largely used in high ...