Abstract: Back-end-of-line devices need amorphous dopable bipolar oxide semiconductors. However, p-type oxides are rare due to self-compensation by native defects. Our simulations find that $\text{TeO ...
We thank Oren Raz for fruitful discussions and Olivier Dauchot for helpful comments. This work was supported by the Israel Science Foundation grant 2117/22. P.B. and M.v.H. acknowledge funding from ...
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