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Abstract: The measurements of high-frequency dielectric displacement-electric field hysteresis loops show the continuous reduction of the apparent coercive field upon the lateral size shrinkage of TiN ...
Abstract: In this study, ferroelectric Fin field effect transistors (Fe-FinFET) with 5-nm-thick Hf0.5Zr0.5O2 (HZO) layers on silicon-on-insulator substrates were experimentally demonstrated. These ...
5O2.MU announced a cash dividend of EUR 0.18 with an ex-date of Jun. 26, 2026 ...
Amaero Inc. (ASX:3DA) (Amaero or the Company) is pleased to share that it has been awarded a production contract in the amount ...
‡ School of Chemical Engineering and State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Luoshi Road 122#, Wuhan 430070, People’s ...
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