EDN

Gate driver for GaN transistors adds galvanic isolation

A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
SpaceNews

Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
Electronic Design

Scrutinizing a SiC Transistor Gate-Driver IC

While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
Business Wire

Panasonic to Start Mass Production of High-speed Gate Driver Dedicated to GaN Power Transistor X-GaN (TM)

MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
Electronic Design

Power transistors, drivers, controllers energize diverse array of products

The Special Report on page 6 of this issue covers power supplies and loads and also offers coverage of products and technologies expected to be highlighted at APEC 2018, March 4-8 in San Antonio, TX.
Electronics Weekly

Galvanically isolated gate driver for GaN transistors

STMicroelectronics has created its first galvanically isolated gate driver for GaN transistors. Called STGAP2GS the wide body SO-8W packaged single-channel driver can work with rails up to 1.2kV. The ...
EDN

650-V half-bridge evaluation cards target GaN drivers and transistors

GaN Systems has developed two 650-V half-bridge evaluation cards (30 A and 60 A) to evaluate gallium nitride (GaN) drivers and GaN transistors in a variety of applications. The company claims these ...
Electronics Weekly

Updated: 600V and 700V GaN transistors co-packaged with drivers

Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages. IGI70NxxxA2xS is to be a 700V range that ...
New Electronics

DESIGN TIPS from ADI: Important Characteristics of Insulated Gate Drivers

In power electronics, as found, for example, in drive technology, IGBTs are frequently used for high voltage and high current switching. These power transistors are voltage controlled and produce ...
Circuit Digest

Simple Self-Timing Electric Motor Built from Scratch

Experience low power, high security, and reliable performance with PolarFire® Core & SoC FPGAs. A maker recently demonstrated how to build a fully functional self timing electric motor using only ...