A new technical paper titled “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review” by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen ...
A technical paper titled “A Review of the Gate-All-Around Nanosheet FET Process Opportunities” was published by researchers at IBM Research Albany. “In this paper, the innovations in device design of ...
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Almost all of TSMC's top-10 customers have readied plans to adopt the foundry's 2nm GAA-FET (gate-all-around field-effect transistor) process technology, to be commercialized in 2025 and with a ...
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