Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

At this week's VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions. As the major portion of the ...

In this letter we report a diamond lateral FinFET fabricated using an ohmic regrowth technique. The use of ohmic regrowth separates the source/drain and gate fabrication, providing a viable means to ...

The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its ...

Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...

FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver ...

SEMATECH experts reported on innovative approaches to realize advanced CMOS logic and memory device technologies and 3D through-silicon via (TSV) manufacturing at the International VLSI Technology, ...

The costs behind moving to 14-nm processes present a huge need to design right first and take a 360-level view when dealing with advanced lithography at an atomic level. The next challenge in ...

Hole spin qubits that operate at temperatures close to 4 K can be created in fin field-effect transistors similar to those used in advanced integrated circuits. Seventy five years after its invention, ...

The IC industry is already weeding out the candidates. In 2005, the Semiconductor Research Corp. (SRC), a chip R&D consortium, launched the Nanoelectronics Research Initiative (NRI), a group that is ...